Related Experiment Video
Updated: Apr 22, 2026

10:18
Exfoliation and Analysis of Large-area, Air-Sensitive Two-Dimensional Materials
Published on: January 5, 2019
12.4K
Semiconducting black phosphorus: synthesis, transport properties and electronic applications
Han Liu1, Yuchen Du, Yexin Deng
1School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, USA. yep@purdue.edu.
Chemical Society Reviews
|October 14, 2014
Summary
Black phosphorus, a layered semiconductor, and its derivative, phosphorene, show great potential for electronic and optoelectronic applications. This review covers their history, properties, and future uses in devices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Solid State Chemistry
Background:
- Phosphorus exists in various allotropes, including white, red, and black phosphorus.
- Black phosphorus is a layered semiconductor with significant potential for electronic and optical applications.
- Phosphorene, a single atomic layer of black phosphorus, exhibits unique physical properties distinct from its bulk form.
Purpose of the Study:
- To review the historical research on black phosphorus, spanning over a century.
- To explore the transition from black phosphorus to phosphorene.
- To highlight the physical and transport properties of phosphorene for advanced applications.
Main Methods:
- Literature review of historical synthesis and material properties of black phosphorus.
- Analysis of the structural transformation from black phosphorus to phosphorene.
- Compilation of physical and transport properties relevant to electronic and optoelectronic devices.
Main Results:
- Black phosphorus has a rich history of research and development.
- The van der Waals structure allows for the reduction of black phosphorus to single-layer phosphorene.
- Phosphorene exhibits distinct physical properties compared to bulk black phosphorus.
Conclusions:
- Black phosphorus and phosphorene are promising materials for next-generation electronic and optoelectronic devices.
- Understanding their properties is crucial for harnessing their full application potential.
- Further research into their synthesis and characterization will drive innovation.
More Related Videos
Related Concept Videos
Semiconductors
1.8K
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
1.8K
Types of Semiconductors
1.7K
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
1.7K
Carrier Transport
1.1K
The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
1.1K
P-N junction
1.6K
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
1.6K
Electrical Transport
177
The electrical transport property of a material is defined by its resistance and conductivity. Resistance is the measure of a material's ability to resist the flow of electric current, while conductivity gauges its ability to allow the current to pass through, depending on the geometry of the measurement cell, such as electrode spacing and area. Conductivity is measured in Siemens (S). There are different types of conductance, including specific conductance, equivalent conductance, and molar...
177
Band Theory
14.5K
When two or more atoms come together to form a molecule, their atomic orbitals combine and molecular orbitals of distinct energies result. In a solid, there are a large number of atoms, and therefore a large number of atomic orbitals that may be combined into molecular orbitals. These groups of molecular orbitals are so closely placed together to form continuous regions of energies, known as the bands.
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...
14.5K

