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Updated: Apr 22, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
AC conductivity parameters of graphene derived from THz etalon transmittance
Weidong Zhang1, Phi H Q Pham, Elliott R Brown
1Terahertz Sensors Laboratory, Departments of Physics and Electrical Engineering, Wright State University, Dayton, OH 45435, USA. weidong.zhang@wright.edu.
Abstract:
THz frequency-domain transmittance measurements were carried out on chemical-vapor-deposited (CVD) graphene films transferred to high-resistivity silicon substrates, and packaged as back-gated graphene field effect transistors (G-FETs). The graphene AC conductivity σ(ω), both real and imaginary parts, is determined between 0.2 and 1.2 THz from the transmittance using the transmission matrix method and curve-fitting techniques. Critical parameters such as the charge-impurity scattering width and chemical potential are calculated. It is found that not only the sheet charge density but also the scattering parameter can be modified by the back-gate voltage.
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