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Updated: Apr 22, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
1UPMC Univ Paris 06, UMR 7588, Institut des Nano-Sciences de Paris (INSP) 4 place Jussieu, Paris, France and CNRS, INSP, UMR 7588, 4 place Jussieu, Paris, France.
Researchers developed a model for strained island growth on patterned surfaces. Islands can form ordered arrays on peaks or valleys, depending on film thickness and wavelength ratios, offering insights into thin film morphology.
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