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Construction and Characterization of External Cavity Diode Lasers for Atomic Physics
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Widely tunable six-section semiconductor laser based on etched slots.

Marta Nawrocka, Qiaoyin Lu, Wei-Hua Guo

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    |October 17, 2014
    PubMed
    Summary
    This summary is machine-generated.

    A novel, re-growth-free tunable laser with integrated semiconductor optical amplifier offers a 55nm tuning range. This simplified fabrication method is ideal for photonics integration, achieving high side mode suppression ratio.

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    Area of Science:

    • Photonics and Optical Engineering
    • Semiconductor Lasers
    • Integrated Optics

    Background:

    • Widely tunable lasers are crucial for optical communications and spectroscopy.
    • Existing tunable laser designs often involve complex fabrication processes like regrowth.
    • Integration of tunable lasers with other photonic components is essential for advanced optical systems.

    Purpose of the Study:

    • To present a novel six-section widely tunable laser utilizing etched slots.
    • To demonstrate a re-growth-free fabrication process suitable for photonic integration.
    • To enhance laser performance through anti-reflection coating and integration with a semiconductor optical amplifier.

    Main Methods:

    • Fabrication of a six-section waveguide laser with etched slots.
    • Application of anti-reflection (AR) coatings to front and back facets.
    • Integration of the laser with a semiconductor optical amplifier.
    • Utilizing the Vernier tuning effect for wavelength selection.

    Main Results:

    • Achieved a wide tuning range of 55nm.
    • Successfully covered 12 supermodes.
    • Demonstrated a side mode suppression ratio (SMSR) greater than 30dB.
    • Confirmed suitability for photonics integration due to re-growth-free design.

    Conclusions:

    • The presented laser platform offers a simplified fabrication process compared to complex superstructure gratings.
    • The re-growth-free design and integration capabilities make it highly suitable for scalable photonic integrated circuits.
    • The device achieves significant performance metrics, including a broad tuning range and high SMSR.