Wavelength dependence of Pockels effect in strained silicon waveguides

We investigate the influence of the wavelength, within the 1.3μm-1.63μm range, on the second-order optical nonlinearity in silicon waveguides strained by a silicon nitride (Si₃N ₄) overlayer. The effective second-order optical susceptibility χxxy(2)¯ evolutions have been determined for 3 different waveguide widths 385 nm, 435 nm and 465 nm and it showed higher values for longer wavelengths and narrower waveguides. For wWG = 385 nm and λ = 1630 nm, we demonstrated χxxy(2)¯ as high as 336 ± 30 pm/V. An explanation based on the strain distribution within the waveguide and its overlap with optical mode is then given to justify the obtained results.