Related Experiment Video
Updated: Apr 22, 2026

15:47
Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
16.0K
InAs/GaAs quantum-dot superluminescent diodes monolithically grown on a Ge substrate
Optics Express
|October 17, 2014
Abstract:
We report the first InAs/GaAs quantum-dot (QD) superluminescent diode (SLD) monolithically grown on a Ge substrate by molecular beam epitaxy. The QD SLD exhibits a 3 dB emission bandwidth of ~60 nm centered at 1252 nm with output power of 27 mW at room temperature. The 3 dB bandwidth is very stable over the temperature range from 20 °C to 100 °C, which highlights the potential for integration with high performance ICs.

