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Updated: Apr 21, 2026

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
Published on: June 25, 2020
Direct laser writing of nanodiamond films from graphite under ambient conditions
Qiong Nian1, Yuefeng Wang2, Yingling Yang1
1School of Industrial Engineering, Purdue University, West Lafayette, IN, USA.
Abstract:
Synthesis of diamond, a multi-functional material, has been a challenge due to very high activation energy for transforming graphite to diamond, and therefore, has been hindering it from being potentially exploited for novel applications. In this study, we explore a new approach, namely confined pulse laser deposition (CPLD), in which nanosecond laser ablation of graphite within a confinement layer simultaneously activates plasma and effectively confine it to create a favorable condition for nanodiamond formation from graphite. It is noteworthy that due to the local high dense confined plasma created by transparent confinement layer, nanodiamond has been formed at laser intensity as low as 3.7 GW/cm(2), which corresponds to pressure of 4.4 GPa, much lower than the pressure needed to transform graphite to diamond traditionally. By manipulating the laser conditions, semi-transparent carbon films with good conductivity (several kΩ/Sq) were also obtained by this method. This technique provides a new channel, from confined plasma to solid, to deposit materials that normally need high temperature and high pressure. This technique has several important advantages to allow scalable processing, such as high speed, direct writing without catalyst, selective and flexible processing, low cost without expensive pico/femtosecond laser systems, high temperature/vacuum chambers.
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