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Sign control of magnetoresistance through chemically engineered interfaces.

David Ciudad1, Marco Gobbi, Christy J Kinane

  • 1Francis Bitter Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA; CIC nanoGUNE, Tolosa Hiribidea 76, 20018, Donostia-San Sebastian, Spain.

Advanced Materials (Deerfield Beach, Fla.)
|October 24, 2014
PubMed
Summary

Chemically engineered interfaces enable control over magnetoresistance sign in spintronic devices. This breakthrough, utilizing lithium fluoride interlayers, allows deterministic tuning for improved device performance.

Keywords:
engineered interfaceslithium fluoridemagnetic tunnel junctionsorganic spin valvesspinterfaces

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Spintronic devices rely on electron spin for operation, offering potential for advanced electronics.
  • Magnetoresistance, the change in electrical resistance in response to a magnetic field, is a key phenomenon in spintronics.
  • Controlling magnetoresistance sign is crucial for designing functional spintronic components.

Purpose of the Study:

  • To investigate the role of chemically engineered interfaces in controlling magnetoresistance.
  • To understand the mechanism behind magnetoresistance inversions in spintronic devices.
  • To demonstrate deterministic control over the magnetoresistance sign in various spintronic device architectures.

Main Methods:

  • Fabrication of spintronic devices (organic spin valves and inorganic magnetic tunnel junctions) with lithium fluoride interlayers.
  • Systematic variation of material deposition order.
  • Characterization of magnetoresistance properties under varying magnetic fields and interface conditions.

Main Results:

  • Observed inversions of magnetoresistance in spintronic devices incorporating lithium fluoride interlayers.
  • Identified the formation of anti-ferromagnetic difluoride layers as the mechanism for magnetoresistance inversion.
  • Demonstrated deterministic control of the magnetoresistance sign by altering the deposition sequence of device materials.

Conclusions:

  • Chemically engineered interfaces, specifically with lithium fluoride, provide a pathway to invert magnetoresistance.
  • The formation of anti-ferromagnetic difluoride layers is key to achieving this inversion.
  • Deterministic control over magnetoresistance sign is achievable in both organic and inorganic spintronic devices through interface engineering.