Influence of Cu vacancy on knit coir mat structured CuS as counter electrode for quantum dot sensitized solar cells

Knit-coir-mat-like structured CuS thin films prepared by chemical bath deposition with different time duration were used as counter electrode in qunatum dot sensitized solar cells. The film deposited at 4 h exhibited better electrochemical and photovoltaic performance with JSC, VOC, and FF values of 14.584 mA cm(-2), 0.566 V, and 54.57% and efficiency of 4.53%. From the UV-vis absorption spectra, it is observed that CuS thin film exhibits free carrier intraband absorption in the longer wavelengh region. The enhanced performance of CuS counter electrodes is due to Cu vacancies with increased S composition, and the quasi-Fermi energy level in semiconductors with respect to electrolyte redox potential is one of the causes that affects the electrocatalytic activity of counter electrodes.