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Black phosphorus radio-frequency transistors.

Han Wang1, Xiaomu Wang, Fengnian Xia

  • 1Ming Hsieh Department of Electrical Engineering, University of Southern California , Los Angeles, California 90089, United States.

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|October 28, 2014
PubMed
Summary

Black phosphorus (BP) field-effect transistors achieve gigahertz operation, demonstrating high current density and on-off ratios. These BP devices show promise for future high-frequency thin-film electronics.

Keywords:
2D materialsBlack phosphorusgraphenephosphoreneradio frequencytransistor

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanoelectronics

Background:

  • Few-layer black phosphorus (BP) is a promising material for nanoelectronics and optoelectronics.
  • BP thin films possess a moderate bandgap (~0.3 eV) and high carrier mobility, enabling transistors with good on-off ratios and high current densities.

Purpose of the Study:

  • To demonstrate gigahertz frequency operation of black phosphorus field-effect transistors (BPFETs) for the first time.
  • To characterize the high-frequency performance of BPFETs.

Main Methods:

  • Fabrication of few-layer black phosphorus field-effect transistors.
  • High-frequency characterization using standard techniques.
  • Measurement of key performance metrics including current density, on-off ratio, and oscillation frequencies.

Main Results:

  • BPFETs exhibited respectable current saturation with an on-off ratio exceeding 2 × 10^3.
  • Achieved current density > 270 mA/mm and DC transconductance > 180 mS/mm for hole conduction.
  • Measured a short-circuit current-gain cutoff frequency (fT) of 12 GHz and a maximum oscillation frequency (fmax) of 20 GHz in 300 nm channel length devices.

Conclusions:

  • BPFETs demonstrate viable gigahertz frequency operation.
  • BP offers potential advantages over graphene for high-frequency electronics due to its finite bandgap and good current saturation.
  • BP is a promising candidate for future high-performance thin-film electronics operating in the multi-GHz range.