Related Experiment Video
Updated: Apr 21, 2026
10:17
20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier
Published on: July 12, 2017
12.3K
Bistability and hysteresis in an optically injected two-section semiconductor laser.
A Pimenov1, E A Viktorov2, S P Hegarty3
1Weierstrass Institute, Mohrenstrasse 39, D-10117 Berlin, Germany.
Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics
|October 30, 2014
Summary
Coherent single frequency injection in semiconductor lasers can lead to bistability. This study numerically demonstrates bistability between continuous-wave and nonstationary operation regimes.
Area of Science:
- Optics and Photonics
- Semiconductor Device Physics
Background:
- Semiconductor lasers are crucial optoelectronic devices.
- Understanding laser dynamics under external injection is vital for device applications.
Purpose of the Study:
- To numerically investigate the impact of coherent single-frequency injection on two-section semiconductor lasers.
- To identify and characterize different operational regimes.
Main Methods:
- Utilizing a numerical model based on delay differential equations.
- Simulating laser behavior under specific injection conditions.
Main Results:
- Demonstrated the existence of bistability.
- Identified distinct continuous-wave and nonstationary operational regimes.
- Showed bistability is prominent with large linewidth enhancement factors.
Conclusions:
- Coherent injection can induce complex dynamics in semiconductor lasers.
- Bistability is a key phenomenon influenced by laser parameters like linewidth enhancement factor.
Related Concept Videos
01:27Biasing of Metal-Semiconductor Junctions
896
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
896
01:22Carrier Generation and Recombination
1.5K
Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
1.5K