Related Experiment Video
Updated: Apr 21, 2026

Resonance Raman Spectroscopy of Extreme Nanowires and Other 1D Systems
Published on: April 28, 2016
Raman scattering study of InAs nanowires under high pressure
Dipanwita Majumdar1, Abhisek Basu, Goutam Dev Mukherjee
1Department of Physics, Bose Institute, 93/1, Acharya Prafulla Chandra Road, Kolkata 700009, India.
Abstract:
The pressure-dependent phonon modes of InAs nanowires have been investigated by Raman spectroscopy under high pressure up to ∼58 GPa. X-ray diffraction measurements show that InAs nanowires at 21 GPa exhibit a phase transition from a wurtzite to an orthorhombic crystal structure, with a corresponding drastic change in the first-order Raman spectra. In the low-pressure regime, a linear increase in phonon frequencies is observed, whereas splitting between longitudinal and transversal optical phonon modes decreases as a function of applied pressure. The calculated mode Grüneisen parameters and Born's transverse effective charge indicate that the wurtzite InAs nanowires exhibit a more covalent nature under compression.
More Related Videos
08:07Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates
Published on: June 18, 2013
08:42High-Sensitivity Nuclear Magnetic Resonance at Giga-Pascal Pressures: A New Tool for Probing Electronic and Chemical Properties of Condensed Matter under Extreme Conditions
Published on: October 10, 2014