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Suspended SOI waveguide with sub-wavelength grating cladding for mid-infrared.

J Soler Penadés, C Alonso-Ramos, A Z Khokhar

    Optics Letters
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    We developed a novel mid-infrared silicon-on-insulator waveguide using sub-wavelength holes for lateral cladding and etching. This design enables efficient bottom oxide removal, achieving low propagation loss for mid-infrared applications.

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    Area of Science:

    • Photonics and Optical Engineering
    • Materials Science

    Background:

    • Silicon-on-insulator (SOI) platforms are crucial for integrated photonics.
    • Mid-infrared (MIR) applications require specialized waveguide designs for efficient light propagation.

    Purpose of the Study:

    • To introduce a new SOI waveguide architecture for MIR applications.
    • To investigate the impact of sub-wavelength hole lattices on waveguide performance and fabrication.

    Main Methods:

    • Fabrication of SOI waveguides with sub-wavelength hole lattices.
    • Characterization of waveguide propagation loss at 3.8 μm.
    • Etching of the buried oxide (BOX) layer using vapor phase and liquid hydrofluoric acid (HF).

    Main Results:

    • A waveguide with a 300 nm grating period and 150 nm holes achieved 3.4 dB/cm loss after partial BOX removal (560 nm) via vapor phase HF.
    • An alternative design with a 550 nm period and 450 nm holes showed 3.6 dB/cm loss after complete BOX removal via liquid phase HF, enabling faster etching.

    Conclusions:

    • The proposed sub-wavelength lattice structure effectively functions as lateral cladding and facilitates BOX removal.
    • Both vapor and liquid HF etching methods are viable for BOX removal, with design choices influencing etching speed and efficiency.
    • The developed waveguides demonstrate promising performance for mid-infrared integrated photonic circuits.