Heterogeneous lasers and coupling to Si₃N₄ near 1060 nm

A III-V/Si₃N₄ platform on silicon is presented capable of broad-spectral performance with initial heterogeneous lasers near 1060 nm. Continuous wave Fabry-Perot laser results for heterogeneous InGaAs/GaAs multiple quantum well (MQW) laser with output power approaching 0.25 mW on Si is demonstrated. Taper transmission loss measurements from III-V to Si₃N₄ are measured to be 2.5±0.75  dB.