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Related Concept Videos

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Atomic Nuclei: Types of Nuclear Relaxation

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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
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Donor-driven spin relaxation in multivalley semiconductors.

Yang Song1, Oleg Chalaev1, Hanan Dery2

  • 1Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627, USA.

Physical Review Letters
|November 1, 2014
PubMed
Summary

Donor atom identity impacts spin relaxation in silicon, a puzzle for spintronics. Our theory explains this via impurity scattering and valley transfer, offering guidelines to enhance spin lifetime in devices.

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Area of Science:

  • Condensed matter physics
  • Materials science
  • Quantum mechanics

Background:

  • Spin relaxation dependence on donor atom identity in n-type silicon is unexplained.
  • This poses a long-standing challenge for semiconductor spintronics.

Purpose of the Study:

  • To explain the observed dependence of spin relaxation on donor atom identity in n-type silicon.
  • To provide theoretical insights for enhancing spin lifetime in spintronics devices.

Main Methods:

  • Multivalley theory of conduction bands in silicon and germanium.
  • Analysis of short-range scattering off central-cell impurity potentials.
  • Symmetry arguments to determine spin-flip process impact.

Main Results:

  • Spin-flip amplitude is dominated by short-range scattering off the central-cell potential.
  • Electron transfer to a different k-space valley axis after scattering is key.
  • This spin-flip process significantly affects spin relaxation in multivalley materials.

Conclusions:

  • The developed theory explains the donor-dependent spin relaxation.
  • Provides physical insights and guidelines to enhance spin lifetime.
  • Offers a pathway for advancing semiconductor spintronics technology.