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Updated: Apr 21, 2026

Writing and Low-Temperature Characterization of Oxide Nanostructures
Published on: July 18, 2014
Thermal desorption spectroscopy from the surfaces of metal-oxide-semiconductor nanostructures
Jan Philipp Meyburg1, Ievgen I Nedrygailov1, Eckart Hasselbrink1
1Fakultät für Chemie, Universität Duisburg-Essen, D-45117 Essen, Germany.
Abstract:
An experimental setup, which combines direct heating and temperature measurement of metal nanofilms allowing temperature programmed desorption experiments is described. This setup enables the simultaneous monitoring of the thermal desorption flux from the surface of chemi-electric devices and detection of chemically induced hot charge carriers under UHV conditions. This method is demonstrated for the case of water desorption from a Pt/SiO2-n-Si metal-oxide-semiconductor nanostructure.

