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Origin of leakage paths driven by electric fields in Al-doped TiO2 films
Gyeong-Su Park1, Seong Yong Park, Sung Heo
1Samsung Advanced Institute of Technology, San 14-1, Nongseo-Ri, Kiheung-Eub, Yongin-Si, Kyeonggi-Do, 446-712, South Korea.
Abstract:
The growth of leakage current paths in Al-doped TiO2 (ATO) films is observed by in situ TEM under negative bias stress. Through systematic HAADF-STEM, STEM-EDS, and STEM-EELS studies, it is confirmed that the electric field-induced growth of the Ru-doped TiO2 phase is the main reason for the ATO film's negative leakage.
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