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Controlled growth of few-layer hexagonal boron nitride on copper foils using ion beam sputtering deposition
Haolin Wang1, Xingwang Zhang, Junhua Meng
1Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China.
Small (Weinheim an Der Bergstrasse, Germany)
|November 5, 2014
Abstract:
Ion beam sputtering deposition (IBSD) is used to synthesize high quality few-layer hexagonal boron nitride (h-BN) on copper foils. Compared to the conventional chemical vapor deposition, the IBSD technique avoids the use of unconventional precursors and is much easier to control, which should be very useful for the large-scale production of h-BN in the future.
