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Few-layer black phosphorus field-effect transistors with reduced current fluctuation.

Junhong Na1, Young Tack Lee, Jung Ah Lim

  • 1Interface Control Research Center, Future Convergence Research Division, Korea Institute of Science and Technology , Seoul 136-791, South Korea .

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|November 5, 2014
PubMed
Summary

Al2O3 passivation significantly reduces current fluctuations in few-layer black phosphorus (BP) field-effect transistors. This improvement is attributed to reduced interface trap density, enhancing device stability and performance.

Keywords:
Al2O3black phosphoruslow-frequency noisepassivationphosphorene

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Semiconductor Device Physics

Background:

  • Few-layer black phosphorus (BP) field-effect transistors (FETs) suffer from current fluctuations.
  • These fluctuations impact device performance and reliability.
  • Interface states between the BP channel and gate dielectric are a primary source of noise.

Purpose of the Study:

  • To investigate the effectiveness of Al2O3 passivation in reducing current fluctuations in few-layer BP FETs.
  • To analyze the impact of Al2O3 passivation on device characteristics and charge transport.
  • To elucidate the role of interface trap density and Schottky barriers in noise phenomena.

Main Methods:

  • Static and low-frequency noise analyses were performed on thermally annealed BP FETs before and after Al2O3 passivation.
  • The carrier number fluctuation (CNF) model was used to describe current fluctuations.
  • Interface trap density (Dit and Nit) was extracted from subthreshold slope (SS) and CNF model.
  • Raman spectroscopy confirmed the stability of passivated BP flakes.

Main Results:

  • Al2O3 passivation effectively reduced current fluctuations in few-layer BP FETs.
  • Passivation led to a significant decrease in interface trap density (Dit and Nit).
  • The study clarified deviations in trap density extraction related to Schottky barriers.
  • Passivated BP flakes showed stability in ambient air for two months.

Conclusions:

  • Al2O3 passivation is a viable strategy for mitigating current fluctuations in few-layer BP FETs.
  • Reduced interface trap density is the key mechanism for noise reduction.
  • Understanding Schottky barrier effects is crucial for accurate device characterization.
  • Al2O3 passivation enhances the environmental stability of BP devices.