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Determination of the electrostatic potential distribution in Pt/Fe:SrTiO₃/Nb:SrTiO₃ thin-film structures by electron
Astrid Marchewka1, David Cooper2, Christian Lenser3
1Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, Sommerfeldstr. 24, 52074 Aachen, Germany.
Abstract:
We determined the electrostatic potential distribution in pristine Pt/Fe:SrTiO3/Nb:SrTiO3 structures by electron holography experiments, revealing the existence of a depletion layer extending into the Nb-doped bottom electrode. Simulations of potential profiles in metal-insulator-metal structures were conducted assuming different types and distributions of dopants. It is found that the presence of acceptor-type dopant concentrations at the Fe:SrTiO3/Nb:SrTiO3 interface with a donor-doped insulating layer provides a good match to the measured profile. Such acceptor-type interface concentrations may be associated with Sr vacancies on the Nb:SrTiO3 side of the bottom interface.
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