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Updated: Apr 21, 2026

Atom Probe Tomography Studies on the CuIn,GaSe2 Grain Boundaries
Published on: April 22, 2013
On the structure of grain/interphase boundaries and interfaces
K Anantha Padmanabhan1, Herbert Gleiter2
1School of Engineering Sciences & Technology and Centre for Nanotechnology, University of Hyderabad, Prof. C. R. Rao Road, Hyderabad 500 046, India.
A generalized model for material interfaces, considering structural units and interatomic interactions, is proposed. This approach accounts for varying boundary characteristics in crystalline and amorphous materials.
Area of Science:
- Materials Science
- Solid State Physics
- Physical Chemistry
Background:
- Material interfaces, including grain and interphase boundaries, exhibit diverse characteristics like misorientation, curvature, and free volume.
- A unified descriptive framework for these interfaces across crystalline and amorphous materials is lacking.
Purpose of the Study:
- To propose a generalized model for describing material interfaces.
- To establish a central concept for a unified theory of grain/interphase boundaries/interfaces.
Main Methods:
- Conceptual modeling based on structural/basic units.
- Consideration of interatomic (including electronic) interactions, atomic/electronic distribution, and free volume.
- Advocacy for representative volume elements for disordered boundaries.
Main Results:
- A generalized model is proposed, centered on a structural/basic unit dependent on interatomic interactions and material properties.
- For highly disordered boundaries, a representative volume approach using non-crystalline basic units is advocated.
- The model acknowledges the influence of experimental conditions and material composition.
Conclusions:
- A generalized model based on structural units offers a unified approach to describing material interfaces.
- The representative volume concept is crucial for understanding highly disordered boundaries.
- Further research is needed to address unresolved issues in quantitative modeling.
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