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Updated: Aug 12, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Switching individual quantum dot emission through electrically controlling resonant energy transfer to graphene
1Molecular Foundry, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
Abstract:
Electrically controlling resonant energy transfer of optical emitters provides a novel mechanism to switch nanoscale light sources on and off individually for optoelectronic applications. Graphene's optical transitions are tunable through electrostatic gating over a broad wavelength spectrum, making it possible to modulate energy transfer from a variety of nanoemitters to graphene at room temperature. We demonstrate photoluminescence switching of individual colloidal quantum dots by electrically tuning their energy transfer to graphene. The gate dependence of energy transfer modulation confirms that the transition occurs when the Fermi level is shifted over half the emitter's excitation energy. The modulation magnitude decreases rapidly with increasing emitter-graphene distance (d), following the 1/d(4) rate trend unique to the energy transfer process to two-dimensional materials.

