Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

1.9K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.9K
Design Example: Resistive Touchscreen01:14

Design Example: Resistive Touchscreen

924
A device engineer plays a crucial role in designing user interfaces for mobile devices. One such interface is the resistive touchscreen, which fundamentally consists of two metallic layers: a flexible upper layer and a rigid lower layer, separated by a narrow gap. The high resistance between these two layers is a key characteristic of this design.
When a user touches the screen, the two layers make contact at a specific point known as the touchpoint. This contact reduces the resistance between...
924
Capacitor With A Dielectric01:18

Capacitor With A Dielectric

5.6K
Parallel plate capacitors consist of two conducting plates separated by a certain distance. However, it is mechanically difficult to hold the large plates parallel to each other without actual contact. Hence, a dielectric layer is commonly placed between the plates, which provides an easy solution for holding the plates together with a small gap and increases the capacitance of the capacitor.
Dielectrics are non-conducting materials with no free or loosely bound electrons. When a dielectric is...
5.6K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Necroptosis in both tumour and stromal compartments determines responsiveness to immunogenic cell death-based immunotherapy.

Nature communications·2026
Same author

X-ray reflectivity and fluorescence study of foulant monolayers for prediction of organic fouling and inorganic scaling during membrane filtration.

Journal of colloid and interface science·2025
Same author

Effect of competition between swelling and dye adsorption on the performance and selectivity of graphene oxide membranes.

Nanoscale·2025
Same author

SPP1 is required for maintaining mesenchymal cell fate in pancreatic cancer.

Nature·2025
Same author

Graphene-PbS quantum dot hybrid photodetectors from 200 mm wafer scale processing.

Scientific reports·2025
Same author

Intercalation of carbon quantum dots into the selective layer of water softening membranes for improved performance and antifouling properties.

The Science of the total environment·2025

Related Experiment Video

Updated: Apr 21, 2026

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

8.4K

Layered memristive and memcapacitive switches for printable electronics.

Alexander A Bessonov1, Marina N Kirikova1, Dmitrii I Petukhov2

  • 1Nokia Labs Skolkovo, Nokia Technologies, 100, Novaya Str., Skolkovo, Moscow Region 143025, Russia.

Nature Materials
|November 11, 2014
PubMed
Summary

Researchers developed novel memristive devices using MoOx/MoS2 and WOx/WS2 heterostructures for low-power neuromorphic computing. These printed electronics offer a large, tunable resistance range and enable synaptic plasticity for adaptive systems.

More Related Videos

Author Spotlight: Microfluidic Channel-Based Soft Electrodes and Their Application in Capacitive Pressure Sensing
05:57

Author Spotlight: Microfluidic Channel-Based Soft Electrodes and Their Application in Capacitive Pressure Sensing

Published on: March 17, 2023

4.5K
A Method for Growing Bio-memristors from Slime Mold
07:46

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

9.5K

Related Experiment Videos

Last Updated: Apr 21, 2026

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

8.4K
Author Spotlight: Microfluidic Channel-Based Soft Electrodes and Their Application in Capacitive Pressure Sensing
05:57

Author Spotlight: Microfluidic Channel-Based Soft Electrodes and Their Application in Capacitive Pressure Sensing

Published on: March 17, 2023

4.5K
A Method for Growing Bio-memristors from Slime Mold
07:46

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

9.5K

Area of Science:

  • Materials Science
  • Electronics Engineering
  • Neuroscience

Background:

  • Novel computing technologies mimicking biological neural systems promise low power consumption and advanced cognitive abilities.
  • Memristive devices, capable of multi-state information storage, are crucial for neuromorphic circuits and adaptive systems.
  • The printed electronics industry demands advanced memory materials for flexible device manufacturing.

Purpose of the Study:

  • To demonstrate solution-processed MoOx/MoS2 and WOx/WS2 heterostructures for advanced memory applications.
  • To achieve a large and tunable electrical resistance range in printed memristive devices.
  • To implement synaptic plasticity mechanisms for neuromorphic computing.

Main Methods:

  • Fabrication of MoOx/MoS2 and WOx/WS2 heterostructures using solution processing.
  • Integration of heterostructures between printed silver electrodes.
  • Characterization of electrical resistance, programming voltages, and switching dynamics.
  • Application of electrical pulses to implement synaptic plasticity.

Main Results:

  • Achieved an unprecedentedly large and tunable electrical resistance range (10^2 to 10^8 Ω).
  • Demonstrated low programming voltages (0.1-0.2 V) for device operation.
  • Observed bipolar resistive switching governed by an ultrathin oxide layer (<3 nm) with a capacitive contribution.
  • Successfully implemented different synaptic plasticity mechanisms through controlled electrical pulsing.

Conclusions:

  • Solution-processed MoOx/MoS2 and WOx/WS2 heterostructures are promising materials for flexible neuromorphic devices.
  • The demonstrated devices offer significant advantages in terms of resistance range, low power consumption, and tunable synaptic functions.
  • These findings pave the way for advanced, low-power adaptive systems and flexible electronics.