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Hybrid 2D-0D MoS2 -PbS quantum dot photodetectors
Dominik Kufer1, Ivan Nikitskiy, Tania Lasanta
1ICFO- Institut de Ciències Fotòniques, Mediterranean Technology Park, 08860, Castelldefels, Barcelona, Spain.
Advanced Materials (Deerfield Beach, Fla.)
|November 18, 2014
Abstract:
A hybrid phototransistor consisting of colloidal PbS quantum dots and few layers of MoS2 (≥2 layers) is demonstrated. The hybrid benefits from tailored light absorption in the quantum dots throughout the visible/near infrared region, efficient charge-carrier separation at the p-n interface, and fast carrier transport through the MoS2 channel. It shows responsivity of up to 10(6) A W(-1) and backgate-dependent sensitivity.
