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Field Effect Transistor

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...

Biasing of FET

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...

MOSFET

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...

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Related Experiment Video

Updated: Apr 20, 2026

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

Published on: February 1, 2022

Vertically architectured stack of multiple graphene field-effect transistors for flexible electronics.

Jie Meng¹, Jing-Jing Chen, Liang Zhang

¹State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing, 100871, PR China; Collaborative Innovation Center of Quantum Matter, Beijing, PR China.

Small (Weinheim an Der Bergstrasse, Germany)

|November 18, 2014

Summary

This summary is machine-generated.

Researchers developed vertically stacked graphene field-effect transistors (GFETs) on flexible substrates, demonstrating exceptional mechanical flexibility and robustness for advanced electronic applications.

Keywords:

PMMA gate dielectric flexible electronics graphene FETs vertical stack

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Area of Science:

Materials Science
Electrical Engineering
Nanotechnology

Background:

Flexible electronics require robust and mechanically stable active components.
Graphene field-effect transistors (GFETs) offer excellent electronic properties but integration into complex architectures remains challenging.

Purpose of the Study:

To develop and characterize vertically architectured stacks of multiple GFETs on flexible substrates.
To investigate the mechanical flexibility and robustness of these novel GFET structures.

Main Methods:

Fabrication of vertically integrated GFETs using graphene channels, PMMA dielectrics, and graphene gate electrodes.
Mechanical testing to evaluate flexibility and robustness of the stacked GFET architecture.

Main Results:

Successfully realized a vertical stack of four GFETs on a flexible substrate.
Demonstrated significant mechanical flexibility and robustness in the fabricated devices.
Confirmed the functionality of dually gated GFETs within the vertical architecture.

Conclusions:

Vertically architectured GFETs on flexible substrates offer a promising pathway for durable and compact flexible electronic systems.
The demonstrated mechanical properties suggest suitability for wearable and conformable electronic applications.