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Cascaded Raman lasing in packaged high quality As₂S₃ microspheres
Optics Express
|November 18, 2014
Summary
Researchers observed cascaded Raman lasing in high-Q arsenic trisulfide (As₂S₃) microspheres. This self-frequency locking laser setup demonstrated multi-order Raman emission with low threshold pump power.
Area of Science:
- Optics and Photonics
- Materials Science
Background:
- High-Q microspheres are crucial for nonlinear optical processes.
- Arsenic trisulfide (As₂S₃) exhibits significant Raman scattering properties.
Purpose of the Study:
- To investigate cascaded stimulated Raman scattering in As₂S₃ microspheres.
- To demonstrate a self-frequency locking laser using these microspheres.
Main Methods:
- Fabrication of high-Q As₂S₃ microspheres.
- Utilizing a self-frequency locking laser setup.
- Measuring threshold pump power and Raman emission orders.
Main Results:
- Observed cascaded Raman lasing up to the 5th order for 1557 nm pump.
- Achieved cascaded Raman lasing up to the 3rd order for 1880 nm pump.
- Demonstrated sub-milliwatt threshold pump power consistent with coupled mode theory.
Conclusions:
- High-Q As₂S₃ microspheres enable efficient cascaded Raman lasing.
- The self-frequency locking laser setup is effective for generating multi-order Raman emission.
- Low threshold power indicates practical potential for integrated photonic devices.

