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Simple method to enhance positive bias stress stability of In-Ga-Zn-O thin-film transistors using a vertically graded

Ji Hoon Park1, Yeong-Gyu Kim, Seokhyun Yoon

  • 1School of Electrical and Electronic Engineering, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea.

ACS Applied Materials & Interfaces
|November 18, 2014
PubMed

Keywords:
In−Ga−Zn−Obias stabilityoxide semiconductoroxygen vacancythin-film transistors

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