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Updated: Apr 20, 2026

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
Published on: March 9, 2019
Hardware implementation of associative memory characteristics with analogue-type resistive-switching device
Kibong Moon1, Sangsu Park, Junwoo Jang
1Pohang University of Science and Technology, Pohang, 790-784, Korea. kbmoon@postech.ac.kr
Abstract:
We have investigated the analogue memory characteristics of an oxide-based resistive-switching device under an electrical pulse to mimic biological spike-timing-dependent plasticity synapse characteristics. As a synaptic device, a TiN/Pr0.7Ca0.3MnO3-based resistive-switching device exhibiting excellent analogue memory characteristics was used to control the synaptic weight by applying various pulse amplitudes and cycles. Furthermore, potentiation and depression characteristics with the same spikes can be achieved by applying negative and positive pulses, respectively. By adopting complementary metal-oxide-semiconductor devices as neurons and TiN/PCMO devices as synapses, we implemented neuromorphic hardware that mimics associative memory characteristics in real time for the first time. Owing to their excellent scalability, resistive-switching devices, shows promise for future high-density neuromorphic applications.
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