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Spin-electricity conversion induced by spin injection into topological insulators.

Y Shiomi¹, K Nomura¹, Y Kajiwara¹

¹Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.

Physical Review Letters

|November 22, 2014

Summary

Researchers achieved spin injection into topological insulator surface states using spin pumping. This demonstrates spin-to-electricity conversion in Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$ and Sn-doped Bi$_{2}$Te$_{2}$Se, converting spin current to charge current.

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Area of Science:

Condensed Matter Physics
Materials Science
Spintronics

Background:

Topological insulators (TIs) possess unique surface states with spin-momentum locking.
Efficient spin-to-charge conversion is crucial for spintronic devices.

Purpose of the Study:

To demonstrate spin injection into TI surface states.
To investigate spin-to-electricity conversion in TIs using spin pumping.

Main Methods:

Spin pumping technique was employed to inject spins.
Voltage measurements across bulk-insulating TI samples (Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$ and Sn-doped Bi$_{2}$Te$_{2}$Se) were performed.

Main Results:

Successful spin injection into the surface states of topological insulators was achieved.
A clear spin-to-electricity conversion effect was observed.
The conversion of injected spins into a Hall charge current was confirmed, attributed to spin-momentum locking.

Conclusions:

Spin pumping is an effective method for spin injection into TI surface states.
The surface states of TIs exhibit efficient spin-to-charge conversion.
This work highlights the potential of TIs for spintronic applications.