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High-temperature continuous-wave laser realized in hollow microcavities
Zhifeng Shi1, Yuantao Zhang1, Xijun Cui1
1State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, China.
Scientific Reports
|November 25, 2014
Summary
Researchers developed a novel ultraviolet (UV) semiconductor laser using zinc oxide (ZnO) nanowalls. This low-threshold, high-performance UV laser offers a significant advancement for coherent light source applications.
Area of Science:
- Materials Science
- Optoelectronics
- Nanotechnology
Background:
- Growing demand for cost-effective, high-performance ultraviolet (UV) semiconductor lasers.
- Zinc oxide (ZnO) is a promising material due to its wide direct band gap and large exciton binding energy.
Purpose of the Study:
- To demonstrate continuous-wave (CW) lasing in electrically-pumped ZnO-based microcavities.
- To investigate the potential of ZnO/MgO-core/shell nanowall networks for UV laser applications.
Main Methods:
- Fabrication of epitaxial ZnO/MgO-core/shell nanowall networks.
- Utilized hollow polygonal microcavities for laser device construction.
- Characterized lasing action via whispering gallery resonant modes.
Main Results:
- Achieved continuous-wave laser operation in electrically-pumped ZnO microcavities.
- Demonstrated an ultralow threshold current density of 0.27 A/cm², significantly lower than existing UV semiconductor lasers.
- Exhibited good temperature tolerance, with lasing up to approximately 430 K.
Conclusions:
- This study presents the first demonstration of CW lasing in electrically-pumped ZnO/MgO nanowall network microcavities.
- The results indicate the feasibility of nano-size injection lasers from epitaxial semiconductor microcavities.
- Represents a significant step towards practical UV coherent light sources with potential for new applications.
