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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

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Boost up carrier mobility for ferroelectric organic transistor memory via buffering interfacial polarization

Huabin Sun1, Qijing Wang1, Yun Li1

  • 1School of Electronic Science and Engineering, Collaborative Center of Advanced Microstructures, National Laboratory of Solid-State Microstructures, Nanjing University, Nanjing 210093, China.

Scientific Reports
|November 28, 2014
PubMed

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