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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Reversible influence of ultrasound on γ-irradiated Mo/n-Si Schottky barrier structure

O Ya Olikh1

  • 1Faculty of Physics, Taras Shevchenko Kyiv National University, Kyiv 01601, Ukraine.

Ultrasonics
|December 3, 2014
PubMed

Keywords:
Dynamic ultrasonic influenceGamma-ray effectSchottky barrierSilicon

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