Related Experiment Video
Updated: Apr 20, 2026
Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
Published on: August 29, 2025
Microwave annealing effect for highly reliable biosensor: dual-gate ion-sensitive field-effect transistor using
In-Kyu Lee1, Kwan Hyi Lee, Seok Lee
1Department of Electronic Materials Engineering, Kwangwoon University , 20 Gwangun-ro, Nowon-gu, Seoul 139-701, Republic of Korea.
Abstract:
We used a microwave annealing process to fabricate a highly reliable biosensor using amorphous-InGaZnO (a-IGZO) thin-film transistors (TFTs), which usually experience threshold voltage instability. Compared with furnace-annealed a-IGZO TFTs, the microwave-annealed devices showed superior threshold voltage stability and performance, including a high field-effect mobility of 9.51 cm(2)/V·s, a low threshold voltage of 0.99 V, a good subthreshold slope of 135 mV/dec, and an outstanding on/off current ratio of 1.18 × 10(8). In conclusion, by using the microwave-annealed a-IGZO TFT as the transducer in an extended-gate ion-sensitive field-effect transistor biosensor, we developed a high-performance biosensor with excellent sensing properties in terms of pH sensitivity, reliability, and chemical stability.
