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Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
Published on: December 7, 2015
Metal-semiconductor transition like behavior of naphthalene-doped single wall carbon nanotube bundles
Fitri Khoerunnisa1, Aaron Morelos-Gomez, Hideki Tanaka
1Department of Chemistry, Indonesia University of Education, Bandung 40154, Indonesia. fitri.khoerunnisa@gmail.com.
Abstract:
Naphthalene (N) or naphthalene-derivative (ND) adsorption-treatment evidently varies the electrical conductivity of single wall carbon nanotube (SWCNT) bundles over a wide temperature range due to a charge-transfer interaction. The adsorption treatment of SWCNTs with dinitronaphthalene molecules enhances the electrical conductivity of the SWCNT bundles by 50 times. The temperature dependence of the electrical conductivity of N- or ND-adsorbed SWCNT bundles having a superlattice structure suggests metal-semiconductor transition like behavior near 260 K. The ND-adsorbed SWCNT gives a maximum in the logarithm of electrical conductivity vs. T(-1) plot, which may occur after the change to a metallic state and be associated with a partial unravelling of the SWCNT bundle due to an evoked librational motion of the moieties of ND with elevation of the temperature.
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