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Design, characterization and analysis of a 0.35 μm CMOS SPAD.

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Summary

This study presents high-performance Single Photon Avalanche Diodes (SPADs) manufactured using standard opto-CMOS technology. A 20-micron SPAD demonstrated the best signal-to-noise ratio, paving the way for high-resolution single-photon imagers.

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Area of Science:

  • Photonics and Optoelectronics
  • Semiconductor Device Physics
  • Integrated Circuit Design

Background:

  • Traditional single-photon detectors often require specialized fabrication processes.
  • Standard opto-CMOS technologies offer a pathway to more accessible and integrated photon detection solutions.

Purpose of the Study:

  • To implement high-performance Single Photon Avalanche Diodes (SPADs) using a standard 0.35-micron opto-CMOS technology.
  • To investigate the performance of SPADs with varying pixel pitches (20 µm down to 5 µm).
  • To identify optimal SPAD designs for high-resolution single-photon imaging applications.

Main Methods:

  • Fabrication of low-noise SPADs in a 0.35-micron opto-CMOS process.
  • Design and characterization of SPADs with pitches ranging from 20 µm to 5 µm.
  • Experimental evaluation of Signal-to-Noise ratio (SNR) for different SPAD designs.

Main Results:

  • Successful implementation of SPADs in a standard opto-CMOS technology.
  • Demonstration of SPADs with pitches as low as 5 µm, enabling dense pixel arrays.
  • The 20-micron SPAD exhibited the highest Signal-to-Noise ratio among the tested devices.

Conclusions:

  • Standard opto-CMOS technology is suitable for fabricating high-performance SPADs.
  • The 20-micron SPAD offers the best SNR, making it a promising candidate for large-format single-photon imagers.
  • This work facilitates the development of integrated, high-resolution single-photon imaging systems.