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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Large changes of graphene conductance as a function of lattice orientation between stacked layers
Hyunsoo Lee1, Yabing Qi, Sangku Kwon
1Center for Nanomaterials and Chemical Reactions, Institute for Basic Science (IBS), Daejeon 305-701, Republic of Korea. Graduate School of EEWS, Korea Advanced Institute of Science and Technology (KAIST) Daejeon 305-701, Republic of Korea.
Abstract:
Using the conductive tip of an atomic force microscope as an electrode, we found that the electrical conductance of graphite terraces separated by steps can vary by large factors of up to 100, depending on the relative lattice orientation of the surface and subsurface layers. This effect can be attributed to interlayer interactions that, when stacked commensurately in a Bernal sequence (ABAB...), cause the band gap to open. Misaligned layers, on the other hand, behave like graphene. Angular misorientations of a few degrees were found to cause large increases in the conductance of the top layer, with the maximum occurring around 30°. These results suggest new applications for graphene multilayers by stacking layers at various angles to control the resistance of the connected graphene ribbons in devices.
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