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    This study demonstrates a novel light-emitting diode (LED) that generates white light. By controlling layer thickness, the LED achieves white light emission through complementary color mixing under alternating current operation.

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    Area of Science:

    • Materials Science
    • Solid-State Physics
    • Optoelectronics

    Background:

    • Developing efficient white light-emitting diodes (LEDs) is crucial for energy-saving illumination.
    • Current white LEDs often rely on phosphors, which can limit efficiency and color rendering.
    • Exploring novel semiconductor structures for direct white light generation is an active research area.

    Purpose of the Study:

    • To fabricate and characterize a novel LED structure capable of generating white light.
    • To investigate the light emission mechanisms under both forward and reverse bias conditions.
    • To demonstrate white light generation by controlling complementary color mixing.

    Main Methods:

    • Fabrication of a multi-layer LED structure including p-GaN, CdZnO/ZnO quantum wells (QWs), high-temperature-grown ZnO, and GaZnO layers.
    • Characterization of electroluminescence under forward and reverse bias.
    • Analysis of light emission properties under alternating current (AC) operation.

    Main Results:

    • The fabricated LED emits green-yellow light from the QW under forward bias.
    • Under reverse bias, yellow-red and ultraviolet light are emitted via carrier tunneling and recombination.
    • Blue light is also observed due to carrier recombination in the p-GaN layer.
    • White light is achieved at 60 Hz AC operation by mixing complementary colors, leveraging persistence of vision.

    Conclusions:

    • The developed LED structure offers a phosphor-free approach to white light generation.
    • Tunable emission properties through layer design enable control over the generated light spectrum.
    • This work presents a promising pathway for advanced solid-state lighting applications.