Theoretical predictions for hot-carrier generation from surface plasmon decay

Ravishankar Sundararaman1, Prineha Narang2, Adam S Jermyn3

  • 1Joint Center for Artificial Photosynthesis, California Institute of Technology, 1200 East California Boulevard, Pasadena, California 91125, USA.

Nature Communications
|December 17, 2014
PubMed
Summary

Surface plasmon decay generates hot carriers for energy applications. This study models carrier generation, revealing metal-specific energy distributions and anisotropic momentum, crucial for optimizing plasmonic devices.

Related Concept Videos

Carrier Generation and Recombination01:22

Carrier Generation and Recombination

Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
1.6K
Carrier Transport01:21

Carrier Transport

The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
1.2K
Theory of Metallic Conduction01:17

Theory of Metallic Conduction

The conduction of free electrons inside a conductor is best described by quantum mechanics. However, a classical model makes predictions close to the results of quantum mechanics. It is called the theory of metallic conduction.
In this theory, Newton's second law of motion is used to determine the acceleration of an electron in the presence of an applied electric field. Then, its velocity is expressed via this acceleration.
An electron moves through the crystal, containing positive ions,...
2.0K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
867
Generating Electromagnetic Radiations01:10

Generating Electromagnetic Radiations

The German physicist Heinrich Hertz (1857–1894) was the first to generate and detect certain types of electromagnetic waves in the laboratory. Starting in 1887, he performed a series of experiments that confirmed the existence of electromagnetic waves and verified that they travel at the speed of light. Hertz used an alternating-current RLC (resistor-inductor-capacitor) circuit that resonated at a known frequency and connected it to a loop of wire. High voltages induced across the gap in...
8.8K
P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
1.8K