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Field effect transistors with current saturation and voltage gain in ultrathin ReS2

Chris M Corbet1, Connor McClellan, Amritesh Rai

  • 1Department of Electrical Engineering, The University of Texas at Austin , Austin, Texas 78712, United States.

ACS Nano
|December 17, 2014
PubMed

Keywords:
TMDgainmobilityrhenium disulfidesaturationtransistor

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