Related Experiment Video
Updated: Apr 19, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Improved Exciton Dissociation at Semiconducting Polymer:ZnO Donor:Acceptor Interfaces via Nitrogen Doping of ZnO
Kevin P Musselman1, Sebastian Albert-Seifried1, Robert L Z Hoye2
1Department of Physics University of Cambridge Cavendish Laboratory JJ Thomson Ave Cambridge, CB3 0HE, UK
Abstract:
Exciton dissociation at the zinc oxide/poly(3-hexylthiophene) (ZnO/P3HT) interface as a function of nitrogen doping of the zinc oxide, which decreases the electron concentration from approximately 1019 cm-3 to 1017 cm-3, is reported. Exciton dissociation and device photocurrent are strongly improved with nitrogen doping. This improved dissociation of excitons in the conjugated polymer is found to result from enhanced light-induced de-trapping of electrons from the surface of the nitrogen-doped ZnO. The ability to improve the surface properties of ZnO by introducing a simple nitrogen dopant has general applicability.
More Related Videos
13:56Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
Published on: October 12, 2019
08:18Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application
Published on: October 3, 2015
Related Concept Videos
Ziegler–Natta Chain-Growth Polymerization: Overview
Types of Semiconductors
Diazonium Group Substitution: –OH and –H
Nuclear Overhauser Enhancement (NOE)
P-N junction
1° Amines to Diazonium or Aryldiazonium Salts: Diazotization with NaNO2 Mechanism