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Published on: September 26, 2016
Electronic structure and stability of fluorophore-nitroxide radicals from ultrahigh vacuum to air exposure
R Kakavandi1, P Ravat, S-A Savu
1Institute of Physical and Theoretical Chemistry, University of Tübingen , Auf der Morgenstelle 18, D-72076 Tübingen, Germany.
Abstract:
Thin film processes of organic radicals remain widely unknown, although these materials may have a significant technological potential. In aiming at their use in applications, we explore the electronic structure of thin films of a nitronyl nitroxide radical attached to a fluorophore core. According to our findings, this molecule maintains its radical function and, consequently, its sensing capabilities in the thin films. The films are characterized by a high structural degree of the molecular arrangement, coupled to strong vacuum and air stability that make this fluorophore-nitroxide radical an extremely promising candidate for application in electronics. Our work also identifies a quantitative correlation between the results obtained by the simultaneous use of X-ray photoemission and electron paramagnetic resonance spectroscopy. This result can be used as a standard diagnostic tool in order to link the (in situ-measured) electronic structure with classical ex situ paramagnetic investigations.
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