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Perfect light trapping in nanoscale thickness semiconductor films with a resonant back reflector and
Jiang-Tao Liu1, Xin-Hua Deng, Wen Yang
1Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Nanchang 330031, China. jtliu@semi.ac.cn.
Abstract:
The optical absorption of nanoscale thickness semiconductor films on top of light-trapping structures based on optical interference effects combined with spectrum-splitting structures is theoretically investigated. Nearly perfect absorption over a broad spectrum range can be achieved in <100 nm thick films on top of a one-dimensional photonic crystal or metal films. This phenomenon can be attributed to interference induced photonic localization, which enhances the absorption and reduces the reflection of the films. Perfect solar absorption and low carrier thermalization loss can be achieved when the light-trapping structures with a wedge-shaped spacer layer or semiconductor films are combined with spectrum-splitting structures.
