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Imaging energy-, momentum-, and time-resolved distributions of photoinjected hot electrons in GaAs
Jun'ichi Kanasaki1, Hiroshi Tanimura1, Katsumi Tanimura1
1The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan.
Abstract:
Using time-and angle-resolved photoemission spectroscopy, we determine directly energy-, momentum-, and time-resolved distributions of hot electrons photoinjected into the conduction band of GaAs, a prototypical direct-gap semiconductor. The nascent distributions of photoinjected electrons are captured for different pump photon energies and polarization. The evolutions of hot electron distributions in ultrafast intervalley scattering processes are resolved in momentum space with fs-temporal resolution, revealing an intervalley transition time as short as 20 fs.
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