Related Experiment Video
Updated: Apr 19, 2026
Metal-Assisted Electrochemical Nanoimprinting of Porous and Solid Silicon Wafers
Published on: February 8, 2022
Electrical characteristics of metal catalyst-assisted etched rough silicon nanowire depending on the diameter size
Sang Hoon Lee1, Tae Il Lee, Su Jeong Lee
1Department of Materials Science and Engineering, ‡Department of Electrical and Electronic Engineering, Yonsei University , Seoul, Korea.
Abstract:
The dependence of electrical properties of rough and cylindrical Si nanowires (NWs) synthesized by diameter-controllable metal catalyst-assisted etching (MCE) on the size of the NW's diameter was demonstrated. Using a decal-printing and transfer process assisted by Al2O3 sacrificial layer, the Si NW field effect transistor (FET) embedded in a polyvinylphenol adhesive and dielectric layer were fabricated. As the diameter of Si NW increased, the mobility of FET increased from 80.51 to 170.95 cm(2)/V·s and the threshold voltage moved from -7.17 to 0 V because phonon-electron wave function overlaps, surface scattering, and defect scattering decreased and gate coupling increased as the ratio of surface-to-volume got reduced.
