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Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
Liquid-phase epitaxial growth of two-dimensional semiconductor hetero-nanostructures
Chaoliang Tan1, Zhiyuan Zeng, Xiao Huang
1School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore) http://www.ntu.edu.sg/home/hzhang/
Abstract:
Although many two-dimensional (2D) hybrid nanostructures are being prepared, the engineering of epitaxial 2D semiconductor hetero-nanostructures in the liquid phase still remains a challenge. The preparation of 2D semiconductor hetero-nanostructures by epitaxial growth of metal sulfide nanocrystals, including CuS, ZnS and Ni3S2, is achieved on ultrathin TiS2 nanosheets by a simple electrochemical approach by using the TiS2 crystal and metal foils. Ultrathin CuS nanoplates that are 50-120 nm in size and have a triangular/hexagonal shape are epitaxially grown on TiS2 nanosheets with perfect epitaxial alignment. ZnS and Ni3S2 nanoplates can be also epitaxially grown on TiS2 nanosheets. As a proof-of-concept application, the obtained 2D CuS-TiS2 composite is used as the anode in a lithium ion battery, which exhibits a high capacity and excellent cycling stability.

