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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
In-situ and tunable nitrogen-doping of MoS2 nanosheets
Si Qin1, Weiwei Lei1, Dan Liu1
1Institute for Frontier Materials, Deakin University, Waurn Ponds, Victoria 3216, Australia.
Abstract:
Molybdenum disulfide (MoS2) nanosheets have unique physical and chemical properties, which make it a perfect candidate for next generation electronic and energy storage applications. Herein, we show the successful synthesis of nitrogen-doped MoS2 nanosheets by a simple, effective and large-scale approach. MoS2 nanosheets synthesised by this method show a porous structure formed by curled and overlapped nanosheets with well-defined edges. Analysis of the nanosheets shows that they have an enlarged interlayer distance and high specific surface area. X-ray photoelectron spectroscopy analysis shows the nanosheets have Mo-N bond indicating successful nitrogen doping. The nitrogen content of the product can be modulated by adjusting the ratio of starting materials easily within the range from ca. 5.8 to 7.6 at%.

