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Updated: Apr 19, 2026

Analysis of Contact Interfaces for Single GaN Nanowire Devices
Published on: November 15, 2013
Subsurface imaging of coupled carrier transport in GaAs/AlGaAs core-shell nanowires
Guannan Chen1, Terrence McGuckin, Christopher J Hawley
1Department of Materials Science and Engineering and ∥Department of Physics, Drexel University , 3141 Chestnut Street, Philadelphia, Pennsylvania 19104, United States.
Abstract:
We demonstrate spatial probing of carrier transport within GaAs/AlGaAs core-shell nanowires with nanometer lateral resolution and subsurface sensitivity by energy-variable electron beam induced current imaging. Carrier drift that evolves with applied electric field is distinguished from a coupled drift-diffusion length. Along with simulation of injected electron trajectories, combining beam energy tuning with precise positioning for selective probing of core and shell reveals axial position- and bias-dependent differences in carrier type and transport along parallel conduction channels. These results indicate how analysis of transport within heterostructured nanomaterials is no longer limited to nonlocal or surface measurements.
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