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Updated: Apr 19, 2026

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures
Published on: February 8, 2018
Stable self-compliance resistive switching in AlOδ/Ta2O(5-x)/TaOy triple layer devices
Huaqiang Wu1, Xinyi Li, Feiyang Huang
1Institute of Microelectronics, Tsinghua University, Beijing 100084, People's Republic of China. Tsinghua National Laboratory for Information Science and Technology (TNList), Beijing 100084, People's Republic of China.
Abstract:
Stable self-compliance property was observed in the AlOδ/Ta2O(5-x)/TaOy triple-layer resistive random access memory structure. The impact of AlOδ barrier layer was studied with different thicknesses. Endurance of more than 10(10) cycles and data retention for more than 3 h at 125 °C were demonstrated. All the measurements were carried out without external current compliance and no hard breakdown was observed. Systematic analysis reveals the self-compliance property is due to the built-in series resistance of the thin AlOδ barrier layer. A model is proposed to explain this self-compliance property.
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