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Updated: Apr 18, 2026
Visible-light Induced Reduction of Graphene Oxide Using Plasmonic Nanoparticle
Published on: September 22, 2015
Gate-tunable photoresponse of defective graphene: from ultraviolet to visible
Kaliannan Thiyagarajan1, Balasubramaniam Saravanakumar, Sang-Jae Kim
1Nanomaterials and System Lab, Department of Mechatronics Engineering, Jeju National University , Jeju 690-756, Republic of Korea.
Abstract:
We report the gate-tunable photoresponse of a defective graphene over the ultraviolet (UV) and the visible light illumination, where the defect was generated by plasma irradiation. Plasma induced Dirac point shift indicates the p-doping effect. Interestingly the defective-graphene field effect transistor (defective-GFET) showed a negative shift upon UV illumination, whereas the device showed a positive shift under visible light illumination, along with the change in the photocurrent. The defective-GFET device showed a high photoresponsivity of 37 mA W(-1) under visible light, that is ∼3 times higher than that of the pristine graphene device. Photoinduced molecular desorption causes the UV light responsivity to 18 mA W(-1). This study shows that the tunable photodetector with high responsivity is feasible by introducing an artificial defect on graphene surface.
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