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Updated: Apr 18, 2026

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High-efficiency Si optical modulator using Cu travelling-wave electrode.

Yan Yang, Qing Fang, Mingbin Yu

    Optics Express
    |January 22, 2015
    PubMed
    Summary
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    This study presents a high-efficiency silicon Mach-Zehnder Interferometer (MZI) optical modulator using copper electrodes. This advancement is crucial for integrating silicon photonics with CMOS circuits.

    Area of Science:

    • Photonics
    • Electrical Engineering
    • Materials Science

    Background:

    • Silicon photonics and CMOS integration are key for advanced optical communication.
    • Developing efficient and compatible optical modulators is essential for high-speed data transmission.

    Purpose of the Study:

    • To demonstrate a high-efficiency, CMOS-compatible silicon Mach-Zehnder Interferometer (MZI) optical modulator.
    • To explore the use of copper traveling-wave electrodes and doping compensation for improved performance.

    Main Methods:

    • Fabrication of a silicon Mach-Zehnder Interferometer (MZI) using CMOS-compatible processes.
    • Integration of copper traveling-wave electrodes and doping compensation techniques.
    • Characterization of electro-optic bandwidth, dynamic extinction ratio, and modulation efficiency.

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    Main Results:

    • Achieved an electro-optic bandwidth exceeding 30 GHz at 1550 nm and Vbias = -5 V.
    • Demonstrated a dynamic extinction ratio greater than 7 dB at a 50 Gbps data rate.
    • The phase shifter exhibited a modulation efficiency (Vπ·Lπ) of approximately 18.5 V·mm.

    Conclusions:

    • The developed Cu-photonics technology shows significant potential for future integration of silicon photonics and CMOS circuits on SOI wafers.
    • This high-performance optical modulator is a key enabler for next-generation optical interconnects.
    • The study highlights the viability of copper interconnects in advanced silicon photonic devices.